HY3810P MOSFET

Type Designator: HY3810P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 346 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 180 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 185 nC

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 1013 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm