IRF100B201 MOSFET(ORIGINAL)

Type Designator: IRF100B201

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 441 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 192 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 170 nC

Rise Time (tr): 97 nS

Drain-Source Capacitance (Cd): 660 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm

Package: TO-220AB