IRF640N MOSFET

Type Designator: IRF640N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 67 nC

Rise Time (tr): 19 nS

Drain-Source Capacitance (Cd): 185 pF

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm