YGW75N65FP IGBT

Type Designator: YGW75N65FP

Type: IGBT

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 500

Maximum Collector-Emitter Voltage |Vce|, V: 650

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 150

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8

Maximum G-E Threshold Voltag |VGE(th)|, V: 6

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 140

Collector Capacity (Cc), typ, pF: 250

Total Gate Charge (Qg), typ, nC: 130